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APTGF50TDU120P
Triple dual Common Source
VCES = 1200V IC = 50A @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
E5/E6
NPT IGBT Power Module
C1 C3 C5
G1
G3
G5
E1 E1/E2
E3 E3/E4
E5
E2
E4
E6
G2 C2
G4 C4
G6 C6
C1
C3
C5
G1 E1/E2 E1 E2 G2 E3/E4
G3 E3 E4 G4 E5/E6
G5 E5 E6 G6
C2
C4
C6
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Max ratings 1200 75 50 150 20 312 150A @ 1200V Unit V
APTGF50TDU120P - Rev 0 September, 2004
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
A V W
Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTGF50TDU120P
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 500 A VGE = 0V Tj = 25C VCE = 1200V Tj = 125C VGE =15V Tj = 25C IC = 50A Tj = 125C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min 1200 Typ Max 500 2500 3.7 6.5 100 Unit V A V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A R G = 5
Min
Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A R G = 5
Typ 3450 330 220 330 35 200 35 65 320 30 5.4 2.3 35 65 360 40 6.9 3.05
Max
Unit pF
nC
ns
mJ
ns
mJ
Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1
APT website - http://www.advancedpower.com
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APTGF50TDU120P - Rev 0 September, 2004
APTGF50TDU120P
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
VR=1200V
50% duty cycle
IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min IGBT Diode 2500 -40 -40 -40 3
60 2 2.3 1.8 400 470 1200 4000 Typ
2.5 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
Max 0.4 0.9 150 125 100 5 250
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M6
Package outline
5 places (3:1)
APT website - http://www.advancedpower.com
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APTGF50TDU120P - Rev 0 September, 2004
APTGF50TDU120P
Typical Performance Curve
200 Ic, Collector Current (A) 160 120 80 40 0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 8 TJ =125C Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle
50
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle
TJ =25C
40 30 20
TJ =25C
T J=125C
10 0 0 1 2 3 VCE , Collector to Emitter Voltage (V)
Gate Charge
4
300
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 IC = 50A TJ = 25C VCE=600V
250 200 150 100 50 0 0
250s Pulse Test < 0.5% Duty cycle
VCE=240V
VCE=960V
TJ =125C TJ =25C 4 8 12 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
16
250
300
350
Gate Charge (nC) On state Voltage vs Junction Temperature
250s Pulse Test < 0.5% Duty cycle VGE = 15V
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
6 5 4 3 2 1 0
Ic=100A Ic=50A
Ic=100A
Ic=50A
Ic=25A
Ic=25A
10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
16
-50
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
Collector to Emitter Breakdown Voltage (Normalized)
1.20 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125
TJ, Junction Temperature (C) Ic, DC Collector Current (A)
90 80 60 50 40 30 20 10 0 70
DC Collector Current vs Case Temperature
1.15
-50
-25
0 25 50 75 100 125 150 TC, Case Temperature (C)
APT website - http://www.advancedpower.com
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APTGF50TDU120P - Rev 0 September, 2004
APTGF50TDU120P
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) VCE = 600V RG = 5 VGE = 15V td(off), Turn-Off Delay Time (ns) 45 Turn-Off Delay Time vs Collector Current
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, TJ =25C
30
250
VCE = 600V RG = 5 0 25 50 75
25 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current
200 100 125
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
180 VCE = 600V RG = 5
tf, Fall Time (ns)
50
tr, Rise Time (ns)
140
40
TJ = 125C
100 VGE=15V
30 T J = 25C VCE = 600V, VGE = 15V, RG = 5 20
60
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
0
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Eon, Turn-On Energy Loss (mJ)
24 20 16 12 8 4 0 0
VCE = 600V RG = 5
TJ =125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
28
Turn-On Energy Loss vs Collector Current
Turn-Off Energy Loss vs Collector Current
8 VCE = 600V VGE = 15V RG = 5 TJ = 125C
6
4
T J =25C, VGE=15V
TJ = 25C
2
0 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Switching Energy Losses (mJ)
16 14 12 10 8 6 4 2 0 0
VCE = 600V VGE = 15V TJ= 125C
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 18
8
Switching Energy Losses vs Junction Temp.
VCE = 600V VGE = 15V RG = 5
Eon, 50A
6
Eoff, 50A Eon, 25A
4 Eoff, 50A 2 Eon, 25A Eoff, 25A 0 0 25 50 75 100 TJ, Junction Temperature (C) 125
Eoff, 25A 10 20 30 40 Gate Resistance (Ohms) 50
APT website - http://www.advancedpower.com
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APTGF50TDU120P - Rev 0 September, 2004
Eon, 50A
APTGF50TDU120P
Capacitance vs Collector to Emitter Voltage 10000 IC, Collector Current (A) C, Capacitance (pF) Cies Minimum Switching Safe Operating Area 160 140 120 100 80 60 40 20 50 0 0 400 800 1200 VCE, Collector to Emitter Voltage (V)
1000 Coes Cres 0 10 20 30 40 V CE, Collector to Emitter Voltage (V)
100
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 0.9
Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40
ZCS ZVS VCE = 600V D = 50% RG = 5 TJ = 125C TC = 75C
20 0
Hard switching
10
20 30 40 50 IC, Collector Current (A)
60
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTGF50TDU120P - Rev 0 September, 2004

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